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| L638xE Half-Bridge Driver |
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The Market trend is to reduce the power consumption increasing the energy efficiency. Power MOSFETs and IGBT transistors are widely used in electronic systems as switches and need to be effectively driven with a gate driver circuit. ST's Power MOSFET and IGBT drivers, which include integrated high voltage half bridge, single and multiple low voltage gate drivers, represent an excellent solution optimized for a wide range of applications. |
The L638xE is a half-bridge gate driver family operating at up to 600V. L638XE is a high-voltage device, manufactured with the BCD"OFF-LINE" technology. It has an Half-Bridge Driver structure that enables to drive N-channel Power MOS or IGBT. The Logic Inputs are CMOS/TTL compatible for ease of interfacing with controlling devices.
Key Features
- Operating at up to 600V
- dV/dt immunity +50V/nsec in full temperature range
- High output drive current: 400/650mA
- Integrated bootstrap diode
- Dead-time setting
Applications
- Home Applicance electric motors
- Industrial Application
- Conditioning System
- Battery Chargers
Block Diagram
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| L6384E |
1x Logic Input, adj. Dead-Time/Shut-Down Input |
| L6385E |
2x Logic Input |
| L6386E |
2x Logic Input, Shut-Down Input, Comparator with Open-Drain Output |
| L6387E |
2x Logic Input, Corss conduction prevention logic |
| L6388E |
2x Logic Input, Corss conduction prevention logic, 3.3V compatible Inputs |
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