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The innovative 600 V MDmesh™II Power MOSFETs address high-efficiency requests not only in terms of conduction losses, providing exceptionally low RDS(on), but also in terms of total switching losses, particularly with the new 600 V FDmesh II fast diode version. The proprietary ST FDmesh™II technology allows the same RDSon for the fast recovery diode version as for the standard speed version. In galvanic isolated inverters for solar power conversion, tests of the STW55NM60N showed almost 95 % efficiency. |
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