Vishay Intertechnology, Inc. (NYSE: VSH) adds new n-channel 20-V, 30-V, and 40-V devices to its PolarPAK® family of power MOSFETs with double-sided cooling, helping designers reduce system size and cost in a new range of applications through better MOSFET thermal performance. - Four new devices with breakdown voltages ranging from 20 V to 40 V
- Share the same footprint area as the standard SO-8 yet are twice as thin, with a height profile of just 0.8 mm
- Dual heat dissipation paths provided by double-sided cooling construction allow high current densities in systems with forced air cooling, enabling more compact designs and/or the ability to reduce the number of paralleled MOSFETs
- 40-V devices provide more design margin with nearly the same efficiency as the 30 V devices
- Two devices also released with somewhat higher on-resistance for cost-sensitive applications where an industry-low level of on-resistance is not required
- Offer manufacturers maximum flexibility, reliability, and ease in handling
- First MOSFET package with double-sided cooling to be sourced by multiple manufacturers
Features - Double-sided cooling helps designers reduce system size and cost through better MOSFET thermal performance
- Deliver up to 48% better on-resistance and 12% better on-resistance-times-gate-charge performance than the next-best devices on the market with double-sided cooling
- Lower conduction and switching losses reduce power consumption in end systems
- Fixed footprint and pad layout independent of die size across range of family, simplifying design-in of devices with new generations of silicon
- Easy to parallel, lowering inductance from board layouts
- Standard leadframe and plastic encapsulation construction provide better die protection
Applications - Synchronous rectification, point-of-load converters, and OR-ing applications in voltage regulator modules (VRM) for servers and workstations, and telecom and data communications systems
Specifications
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